Manufacturer Part Number
SI7108DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
Low on-resistance
High current capability
Wide temperature range
Product Advantages
Compact surface mount package
Efficient power management
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Gate-Source Voltage (Vgs): ±16 V
On-Resistance (Rds(on)): 4.9 mΩ
Continuous Drain Current (Id): 14 A
Power Dissipation (Pd): 1.5 W
Threshold Voltage (Vgs(th)): 2 V
Gate Charge (Qg): 30 nC
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Designed for various electronic circuits and power management systems
Application Areas
Switching power supplies
Motor drives
Industrial automation
Consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose
Excellent power handling capability
Compact and efficient package
Reliable performance in wide temperature range
Suitable for high-reliability applications