Manufacturer Part Number
SI7110DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET transistor
Part of the TrenchFET series
Product Features and Performance
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Current Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Operating Temperature: -55°C ~ 150°C (TJ)
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Wide operating temperature range
Key Technical Parameters
MOSFET (Metal Oxide) technology
N-Channel FET type
PowerPAK 1212-8 package
Tape & Reel (TR) packaging
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount design
Application Areas
Suitable for a variety of power management and control applications
Product Lifecycle
Current product, no discontinuation information available
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
High performance and efficiency with low on-resistance
Robust design with wide operating temperature range
Compact surface mount package for space-constrained applications
RoHS compliance for environmentally-friendly use