Manufacturer Part Number
SI7110DN-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI7110DN-T1-E3 is a discrete semiconductor product, specifically a Transistor - FET, MOSFET - Single.
Product Features and Performance
TrenchFET series
N-Channel MOSFET
20V Drain to Source Voltage
±20V Gate to Source Voltage
3mOhm Maximum On-Resistance
5A Continuous Drain Current
5W Maximum Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
Compact PowerPAK 1212-8 package
Low on-resistance for high efficiency
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds On): 5.3mOhm
Continuous Drain Current (Id): 13.5A
Power Dissipation (Max): 1.5W
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package
Application Areas
Suitable for a wide range of applications, including power supplies, motor drives, and industrial control systems.
Product Lifecycle
Currently available, no known discontinuation plans.
Key Reasons to Choose This Product
Compact and efficient PowerPAK 1212-8 package
Low on-resistance for high efficiency
Wide operating temperature range of -55°C to 150°C
Suitable for a variety of applications in power electronics and industrial control systems.