Manufacturer Part Number
SI7106DN-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors, FETs, MOSFETs - Single
Product Features and Performance
Trench MOSFET technology
Low on-resistance
High current capability
Wide operating temperature range (-55°C to 150°C)
Product Advantages
High efficiency
Small footprint
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±12V
On-resistance (Rds(on)): 6.2mΩ @ 19.5A, 4.5V
Continuous Drain Current (Id): 12.5A @ 25°C
Power Dissipation: 1.5W @ 25°C
Gate Charge (Qg): 27nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Reliable PowerPAK 1212-8 package
Compatibility
Suitable for a wide range of applications requiring high-performance N-channel MOSFETs
Application Areas
Power management
Motor control
Switching circuits
Amplifier circuits
Product Lifecycle
Currently available
No known discontinuation plans
Replacements and upgrades may be available
Key Reasons to Choose
Excellent performance characteristics
Compact and efficient design
Wide operating temperature range
Reliable and RoHS-compliant