Manufacturer Part Number
SI7101DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET MOSFET
Product Features and Performance
30V Drain-Source Voltage
2mΩ Maximum On-Resistance
35A Continuous Drain Current
Wide Operating Temperature Range (-55°C to 150°C)
Fast Switching Speed
Low Gate Charge
High Power Dissipation (3.7W at Ta, 52W at Tc)
Product Advantages
Excellent power efficiency
Reliable high-temperature operation
Compact surface-mount package
Key Technical Parameters
Vdss: 30V
Vgs(max): ±25V
Rds(on) max: 7.2mΩ @ 15A, 10V
Id continuous: 35A @ 25°C
Ciss max: 3595pF @ 15V
Qg max: 102nC @ 10V
Quality and Safety Features
RoHS3 compliant
PowerPAK 1212-8 package for improved thermal performance and reliability
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power management
Motor control
Industrial and consumer electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance
Reliable high-temperature operation
Compact surface-mount package for space-constrained designs
Proven TrenchFET technology for reliable performance