SI2319CDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2319CDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI2319CDS-T1-GE3 is a P-channel MOSFET transistor from Vishay/Siliconix's TrenchFET series, designed for a variety of power management and control applications.

Product Features and Performance

P-channel MOSFET with low on-resistance (Rds(on))

40V drain-source voltage rating

4A continuous drain current at 25°C

25W power dissipation at 25°C

Fast switching speed

Low gate charge (Qg)

Trench technology for improved performance

Product Advantages

Efficient power management

Compact surface-mount package

Reliable and durable construction

Suitable for a wide range of applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 40V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 77mΩ @ 3.1A, 10V

Continuous Drain Current (Id): 4.4A @ 25°C

Input Capacitance (Ciss): 595pF @ 20V

Power Dissipation (Max): 1.25W @ 25°C, 2.5W @ Case Temperature

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Moisture Sensitivity Level (MSL): 1

Compatibility

This MOSFET is compatible with a wide range of power management and control applications, including:

Switch-mode power supplies

Motor drivers

Battery chargers

Portable electronics

Industrial control systems

Application Areas

Power management

Motor control

Power conversion

Battery charging

General-purpose switching

Product Lifecycle

The SI2319CDS-T1-GE3 is an active product and is not nearing discontinuation. Replacement or upgraded products may be available from Vishay/Siliconix.

Key Reasons to Choose

Excellent performance and efficiency

Compact surface-mount package

Reliable and durable construction

Suitable for a wide range of applications

Availability of replacement or upgraded products