SI2319DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2319DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This product is a Discrete Semiconductor device from the Transistors - FETs, MOSFETs - Single category.

Product Features and Performance

P-Channel MOSFET

40V Drain-Source Voltage

82mOhm On-Resistance @ 3A, 10V

3A Continuous Drain Current @ 25°C

470pF Input Capacitance @ 20V

750mW Power Dissipation

-55°C to 150°C Operating Temperature Range

Product Advantages

Excellent on-state resistance for low power loss

High current handling capability

Wide temperature range operation

Small package size for compact designs

Key Technical Parameters

Vdss: 40V

Vgs(Max): ±20V

Rds(on) Max: 82mOhm

Id (Continuous): 2.3A

Ciss (Max): 470pF

Pd (Max): 750mW

Vgs(th) (Max): 3V

Qg (Max): 17nC

Quality and Safety Features

RoHS3 compliant

Tape and Reel packaging

Compatibility

The SI2319DS-T1-GE3 is a surface mount device in the SOT-23-3 (TO-236) package, compatible with standard MOSFET mounting and assembly processes.

Application Areas

Power management circuits

Motor control

Switching circuits

General purpose amplifier and switching applications

Product Lifecycle

This product is an active and currently available component from Vishay/Siliconix. No information on discontinuation or replacement is provided.

Key Reasons to Choose This Product

Excellent on-resistance performance for efficient power switching

High current handling capability in a small package

Wide operating temperature range for versatile applications

RoHS compliance for use in modern electronic designs

Tape and reel packaging for automated assembly