SI2319DS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2319DS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single

Product Features and Performance

P-Channel MOSFET

Drain to Source Voltage (Vdss) of 40V

Vgs (Max) of ±20V

Rds On (Max) of 82mOhm @ 3A, 10V

Continuous Drain Current (Id) of 2.3A @ 25°C

Input Capacitance (Ciss) of 470pF @ 20V

Power Dissipation (Max) of 750mW

Vgs(th) (Max) of 3V @ 250A

Gate Charge (Qg) of 17nC @ 10V

Product Advantages

Low on-resistance

High current carrying capability

Compact surface mount package

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: P-Channel

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Operating Temperature: -55°C to 150°C (TJ)

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Package / Case: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SOT-23-3 (TO-236)

Manufacturer's packaging: SOT-23-3 (TO-236)

Application Areas

Suitable for various power management and control applications

Product Lifecycle

This product is an active and available part from the manufacturer.

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance, high current capability, and compact size

Suitable for a wide range of power management and control applications

Compliant with RoHS regulations for environmental responsibility

Readily available from the manufacturer in standard packaging options