SI2319DDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2319DDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-Channel MOSFET with low on-resistance for power management and switching applications.

Product Features and Performance

Low on-resistance of 75mOhm @ 2.7A, 10V

Low input capacitance of 650pF @ 20V

Continuous drain current of 2.7A at 25°C (Ta) and 3.6A at 25°C (Tc)

Drain-to-source voltage of 40V

Gate-to-source voltage of ±20V

Power dissipation of 1W at 25°C (Ta) and 1.7W at 25°C (Tc)

Operating temperature range of -55°C to 150°C

Product Advantages

Low on-resistance for efficient power delivery

Low input capacitance for fast switching

High continuous drain current for high power applications

Wide voltage and temperature ranges for versatile use

Key Technical Parameters

P-Channel MOSFET

Vds: 40V

Vgs(max): ±20V

Rds(on): 75mOhm @ 2.7A, 10V

Id(continuous): 2.7A (Ta), 3.6A (Tc)

Ciss: 650pF @ 20V

Pd: 1W (Ta), 1.7W (Tc)

Operating temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Qualified to military standards for reliable performance

Compatibility

Surface mount package (SOT-23-3)

Suitable for power management and switching applications

Application Areas

Power supplies

Motor drives

Battery management systems

Voltage regulators

Switching circuits

Product Lifecycle

Current production

Replacements and upgrades available from Vishay

Key Reasons to Choose This Product

Excellent efficiency due to low on-resistance

Fast switching capability from low input capacitance

Wide voltage and temperature operating ranges

Reliable performance and quality assurance

Compatibility with various power management and switching applications