Manufacturer Part Number
SI2318DS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Single N-Channel MOSFET transistor
Part of the TrenchFET series
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 40V
Gate-to-Source Voltage (Vgs) of ±20V
On-State Resistance (Rds(on)) of 45mΩ @ 3.9A, 10V
Continuous Drain Current (Id) of 3A at 25°C
Input Capacitance (Ciss) of 540pF @ 20V
Power Dissipation (Pd) of 750mW at 25°C
Product Advantages
Trench MOSFET technology for low on-resistance
High power density and efficiency
Suitable for high-frequency switching applications
Key Technical Parameters
MOSFET technology: N-Channel
Vgs(th) (Max) of 3V @ 250μA
Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V
Gate Charge (Qg) of 15nC @ 10V
Quality and Safety Features
RoHS3 compliant
Operates in the temperature range of -55°C to 150°C
Compatibility
Suitable for surface mount applications
Package: SOT-23-3 (TO-236)
Application Areas
Suitable for high-frequency switching applications
Ideal for use in power supplies, DC-DC converters, and motor drives
Product Lifecycle
Currently in production
Availability of similar replacement options from Vishay and other manufacturers
Key Reasons to Choose This Product
Trench MOSFET technology provides low on-resistance and high efficiency
Compact SOT-23-3 package suitable for space-constrained designs
Wide operating temperature range of -55°C to 150°C
RoHS3 compliance for environmentally-friendly applications
Availability of similar replacement options ensures long-term availability