Manufacturer Part Number
SI2318CDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor with High Performance and Efficiency
Product Features and Performance
High power density and compact size
Low on-resistance for improved efficiency
Fast switching speed
Optimized for high-frequency applications
Stable electrical characteristics across wide temperature range
Product Advantages
Excellent thermal management
Efficient power conversion
Reliable and long-lasting performance
Suitable for various power electronics applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 42mΩ @ 4.3A, 10V
Continuous Drain Current (Id): 5.6A @ 25°C
Input Capacitance (Ciss): 340pF @ 20V
Power Dissipation: 1.25W (Ta), 2.1W (Tc)
Operating Temperature: -55°C to 150°C
Quality and Safety Features
Compliant with RoHS3 directive
Robust design for reliable operation
Stringent quality control and testing
Compatibility
Compatible with various power electronic circuits and systems
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Battery chargers
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High efficiency and low power loss
Excellent thermal management
Reliable and long-lasting performance
Suitable for a wide range of power electronics applications
Compact and space-saving design
Compliant with industry standards and regulations