Manufacturer Part Number
SI2318DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
ROHS3 Compliant
TO-236-3, SC-59, SOT-23-3 package
TrenchFET series
Tape & Reel (TR) packaging
Operating temperature range: -55°C to 150°C
Drain to Source Voltage (Vdss): 40V
Maximum Gate-Source Voltage (Vgs): ±20V
Maximum On-Resistance (Rds(on)): 45mΩ @ 3.9A, 10V
MOSFET (Metal Oxide) technology
Continuous Drain Current (Id) @ 25°C: 3A
Maximum Input Capacitance (Ciss): 540pF @ 20V
Maximum Power Dissipation: 750mW
N-Channel FET type
Maximum Gate Threshold Voltage (Vgs(th)): 3V @ 250μA
Drive Voltage Range: 4.5V to 10V
Maximum Gate Charge (Qg): 15nC @ 10V
Product Advantages
Low on-resistance
High power density
Wide operating temperature range
Efficient power conversion
Key Technical Parameters
Drain to Source Voltage (Vdss)
Gate-Source Voltage (Vgs)
On-Resistance (Rds(on))
Drain Current (Id)
Input Capacitance (Ciss)
Power Dissipation
Gate Threshold Voltage (Vgs(th))
Gate Charge (Qg)
Quality and Safety Features
ROHS3 compliant
Reliable performance within specified operating conditions
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
Lighting controls
Product Lifecycle
Current production status: Active
Replacement or upgrade options available from the manufacturer
Several Key Reasons to Choose This Product
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
Reliable performance and ROHS3 compliance for quality assurance
Compatibility with a variety of power management and control applications
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