Manufacturer Part Number
SI2318CDS-T1-BE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance (RDS(on))
High current capability (4.3A continuous drain current)
Wide operating temperature range (-55°C to 150°C)
Low gate charge (Qg) for fast switching
Low input capacitance (Ciss)
Surface mount packaging (SOT-23-3)
Product Advantages
Efficient power handling
Reliable and durable performance
Compact and space-saving design
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (RDS(on)): 42mΩ @ 4.3A, 10V
Continuous Drain Current (ID): 4.3A (Ta), 5.6A (Tc)
Input Capacitance (Ciss): 340pF @ 20V
Power Dissipation (PD): 1.25W (Ta), 2.1W (Tc)
Quality and Safety Features
Robustly designed for reliable operation
Compliant with industry safety standards
Compatibility
Suitable for a wide range of electronic devices and circuits
Application Areas
Power management circuits
Switching circuits
Motor control
Lighting control
Audio amplifiers
Product Lifecycle
This product is an active and widely available MOSFET transistor
Replacement and upgrade options are readily available from Vishay and other manufacturers
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and durable performance
Compact and space-saving design
Wide operating temperature range
Suitable for a diverse range of applications
Readily available and easily replaceable