Manufacturer Part Number
SI2316BDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI2316BDS-T1-GE3 is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
Trench MOSFET technology
30V drain-source voltage
5A continuous drain current
50 mΩ maximum on-resistance
350 pF maximum input capacitance
25W power dissipation (at Ta)
66W power dissipation (at Tc)
-55°C to 150°C operating temperature range
Product Advantages
Efficient power switching
High current handling capability
Low on-resistance for low power losses
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 50 mΩ
Continuous Drain Current (Id): 4.5A
Input Capacitance (Ciss): 350 pF
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Quality and Safety Features
RoHS3 compliant
Tin-lead (Sn-Pb) plating on leads
Compatibility
Compatible with standard surface mount assembly processes
Application Areas
Power management circuits
Motor control applications
Switching power supplies
Automotive electronics
Product Lifecycle
Current product, no discontinuation plans
Replacement or upgrade options available from Vishay
Several Key Reasons to Choose This Product
Efficient power switching performance
High current handling capability
Low on-resistance for low power losses
Compact surface mount package
Wide operating temperature range
RoHS3 compliance for environmental reliability