Manufacturer Part Number
SI2316DS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistor - FET, MOSFET - Single
Product Features and Performance
N-Channel MOSFET
Trench Technology
30V Drain-Source Voltage
50mΩ Typical On-Resistance
9A Continuous Drain Current
215pF Input Capacitance
7nC Gate Charge
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance
High Power Handling
Compact Surface Mount Package
Wide Operating Temperature Range
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 50mΩ @ 3.4A, 10V
Continuous Drain Current (Id): 2.9A
Input Capacitance (Ciss): 215pF @ 15V
Power Dissipation (Pd): 700mW
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
Surface Mount, TO-236-3, SC-59, SOT-23-3 Package
Application Areas
Power Management
Switching Circuits
Motor Control
DC/DC Converters
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
Low On-Resistance for high efficiency
High Power Handling Capability
Compact Surface Mount Package
Wide Operating Temperature Range
RoHS Compliance for environmental regulations