Manufacturer Part Number
SI1417EDH-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
P-channel enhancement-mode MOSFET
Product Features and Performance
Low on-resistance
Fast switching speed
Low gate charge
Wide operating temperature range
Product Advantages
Efficient power management
Improved system reliability
Reduced power consumption
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Maximum Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 85mΩ @ 3.3A, 4.5V
Continuous Drain Current (Id): 2.7A @ 25°C
Power Dissipation (Max): 1W @ 25°C
Gate Charge (Qg): 8nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Suitable for surface mount applications
Application Areas
Power management circuits
Switching applications
Battery-powered devices
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power efficiency
Reliable performance in a wide temperature range
Compact surface mount package
Easy integration into power management systems
Compliant with industry safety and quality standards