Manufacturer Part Number
SI1411DH-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
Trench MOSFET Technology
Designed for Efficient Power Conversion and Control
Low On-Resistance
Fast Switching Speed
High Blocking Voltage Capability
Product Advantages
Optimized for Efficient Power Management
Reliable and Robust Performance
Compact Surface Mount Package
Key Technical Parameters
Drain to Source Voltage (Vdss): 150 V
Gate-Source Voltage (Vgs Max): ±20 V
On-Resistance (Rds(on) Max): 2.6 Ω @ 500 mA, 10 V
Continuous Drain Current (Id): 420 mA @ 25°C
Power Dissipation (Max): 1 W
P-Channel FET Type
Gate Threshold Voltage (Vgs(th) Max): 4.5 V @ 100 μA
Gate Charge (Qg Max): 6.3 nC @ 10 V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
Meets Relevant Safety and Reliability Standards
Compatibility
Suitable for a Wide Range of Power Management and Control Applications
Application Areas
Efficient Power Conversion and Control
Power Management Circuits
Switching Power Supplies
Motor Drives
Industrial and Consumer Electronics
Product Lifecycle
Mature and Widely Available Product
No Discontinuation or Replacement Plans Announced
Key Reasons to Choose
Optimized for Efficient Power Management
Reliable and Robust Performance
Wide Operating Temperature Range
Compact Surface Mount Packaging
Compliance with Relevant Safety and Environmental Standards