SI1413EDH-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI1413EDH-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

MOSFET (Metal Oxide) Technology

P-Channel FET Type

Drain to Source Voltage (Vdss) of 20 V

Vgs (Max) of ±12 V

Rds On (Max) of 115 mOhm @ 2.9 A, 4.5 V

Continuous Drain Current (Id) of 2.3 A @ 25°C

Power Dissipation (Max) of 1 W @ 25°C

Vgs(th) (Max) of 450 mV @ 100 A (Min)

Drive Voltage (Max Rds On, Min Rds On) of 1.8 V, 4.5 V

Gate Charge (Qg) (Max) of 8 nC @ 4.5 V

Operating Temperature Range of -55°C to 150°C (TJ)

Product Advantages

RoHS3 Compliant

Surface Mount Packaging

Tape & Reel Packaging

Key Technical Parameters

Manufacturer Part Number: SI1413EDH-T1-E3

Package / Case: 6-TSSOP, SC-88, SOT-363

Supplier Device Package: SC-70-6

Series: TrenchFET

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic systems and applications

Application Areas

Suitable for use in a wide range of electronic circuits and devices

Product Lifecycle

Current product, no indication of discontinuation

Replacements and upgrades may be available

Several Key Reasons to Choose This Product

Reliable MOSFET technology

Wide operating temperature range

Low on-resistance and power dissipation

RoHS3 compliance for environmental friendliness

Surface mount and tape & reel packaging for ease of use