Manufacturer Part Number
SI1416EDH-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
Continuous Drain Current (Id) of 3.9A at 25°C
Very low On-Resistance (RDS(on)) of 58 milliohms at 10V gate voltage
Operating Temperature range of -55°C to 150°C
Gate Charge (Qg) of 12nC at 10V gate voltage
Product Advantages
Efficient power conversion
Low conduction losses
Reliable high-temperature operation
Compact form factor
Key Technical Parameters
Drain to Source Voltage (VDS): 30V
Gate to Source Voltage (VGS): ±12V
Power Dissipation (Max): 2.8W
Quality and Safety Features
RoHS3 compliant
Tape and Reel packaging
Compatibility
Surface mount package (6-TSSOP, SC-88, SOT-363)
Application Areas
Power supplies
Switching regulators
Motor drives
Amplifiers
Instrumentation
Product Lifecycle
Current product, no discontinuation or replacement plans known
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Reliable high-temperature operation
Compact and easy to integrate design
Suitable for a wide range of power management applications