Manufacturer Part Number
SI1427EDH-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor device, specifically a P-channel MOSFET transistor.
Product Features and Performance
Trench MOSFET technology
20V drain-to-source voltage rating
Max operating temperature of 150°C
Continuous drain current of 2A at 25°C
On-resistance as low as 64mΩ
Max gate-source voltage of ±8V
Gate charge of 21nC at 8V
Product Advantages
Low on-resistance for high efficiency
Compact 6-pin TSSOP/SOT-363 package
Wide temperature range operation
RoHS3 compliant
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 64mΩ @ 3A, 4.5V
Continuous Drain Current (Id): 2A @ 25°C
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Quality and Safety Features
RoHS3 compliant
Meets industrial/automotive quality standards
Compatibility
Surface mount package (SC-70-6)
Compatible with standard MOSFET drivers and control circuits
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial and automotive electronics
Product Lifecycle
Current production part, no discontinuation planned
Replacement or upgraded parts available if needed
Key Reasons to Choose This Product
High efficiency due to low on-resistance
Wide temperature range for demanding applications
Compact packaging for space-constrained designs
RoHS compliance for environmental responsibility
Proven Vishay/Siliconix quality and reliability