Manufacturer Part Number
SI1424EDH-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel TrenchFET MOSFET for Power Management Applications
Product Features and Performance
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Optimized for synchronous rectification and PWM control
Rugged and reliable design
Product Advantages
Improved power efficiency
Reduced power losses
Compact design
Reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Maximum Gate-Source Voltage (Vgs(max)): ±8V
On-Resistance (Rds(on)): 33mΩ @ 5A, 4.5V
Continuous Drain Current (Id): 4A @ 25°C
Power Dissipation (Ptot): 1.56W @ 25°C, 2.8W @ 100°C
Gate Charge (Qg): 18nC @ 8V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Surface mount package (SC-70-6)
Compatible with standard MOSFET drivers and control circuits
Application Areas
Synchronous rectification
Power management circuits
DC-DC converters
Switching regulators
Motor drives
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
High efficiency and low power losses
Fast switching for high-frequency operation
Robust and reliable design
Compact surface mount package
Compatibility with standard MOSFET control circuits
RoHS compliance and AEC-Q101 qualification for automotive and industrial applications
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