SI1032R-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1032R-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This product is a discrete semiconductor device, specifically a transistor - FET, MOSFET - single.

Product Features and Performance

N-Channel MOSFET

20V Drain to Source Voltage

Maximum Gate-Source Voltage of ±6V

On-Resistance (RDS(on)) of 5Ω at 200mA, 4.5V

Continuous Drain Current (ID) of 140mA at 25°C

Maximum Power Dissipation of 250mW at 25°C

Gate Charge (Qg) of 0.75nC at 4.5V

Product Advantages

Compact surface mount package

MOSFET technology for high efficiency

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

MOSFET technology

N-Channel

20V Drain to Source Voltage

±6V Maximum Gate-Source Voltage

5Ω On-Resistance at 200mA, 4.5V

140mA Continuous Drain Current at 25°C

250mW Maximum Power Dissipation at 25°C

75nC Gate Charge at 4.5V

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Surface mount package (SC-75A, SOT-416) compatible with standard SMT assembly processes.

Application Areas

Power management circuits

Switching circuits

Amplifier circuits

General purpose switching applications

Product Lifecycle

This product is an actively available and supported part from Vishay / Siliconix. No discontinuation or replacement plans have been announced.

Key Reasons to Choose This Product

Compact surface mount package

Efficient MOSFET technology

Wide operating temperature range

Low on-resistance and gate charge for high performance

RoHS3 compliance for environmental responsibility

Availability and support from a trusted manufacturer