Manufacturer Part Number
SI1034CX-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Dual N-Channel MOSFET
Product Features and Performance
20V Drain-to-Source Voltage
396mΩ Maximum On-Resistance
610mA Continuous Drain Current
43pF Input Capacitance
Logic Level Gate
2nC Gate Charge
Product Advantages
Compact SOT-563 and SOT-666 Surface Mount Packages
Suitable for Space-Constrained Designs
High Performance and Efficiency
Key Technical Parameters
MOSFET Technology
Dual N-Channel Configuration
-55°C to 150°C Operating Temperature Range
220mW Power Dissipation
Quality and Safety Features
RoHS3 Compliant
Reliable Trench MOSFET Design
Compatibility
Compatible with a wide range of electronic applications and circuit designs.
Application Areas
Power Management Circuits
Switching Applications
Voltage Regulator Circuits
Motor Control
General Purpose Amplification
Product Lifecycle
The SI1034CX-T1-GE3 is an active product and is not nearing discontinuation. Replacements and upgrades may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent performance and efficiency
Compact and space-saving surface mount package
Reliable and robust Trench MOSFET technology
Wide operating temperature range
Suitable for a variety of power management and switching applications