SI1032R-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI1032R-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel TrenchFET MOSFET

Product Features and Performance

Low on-resistance

Low gate charge

Low power dissipation

Wide operating temperature range (-55°C to 150°C)

Suitable for high-frequency switching applications

Product Advantages

Excellent thermal performance

Robust and reliable design

Optimized for high-efficiency power conversion

Ideal for portable electronics and battery-powered devices

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±6V

On-Resistance (Rds(on)): 5Ω @ 200mA, 4.5V

Continuous Drain Current (Id): 140mA

Power Dissipation (Pd): 250mW

Gate Charge (Qg): 0.75nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Manufactured in ISO-certified facilities

Robust construction for high reliability

Compatibility

Suitable for a wide range of electronic applications, including power supplies, motor drives, and switching circuits

Application Areas

Portable electronics

Power management

Battery-powered devices

Industrial and automotive electronics

Product Lifecycle

Currently in production

No plans for discontinuation

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent thermal performance and low power dissipation

Optimized for high-efficiency power conversion

Robust and reliable design for long-term use

Suitable for a wide range of electronic applications

Competitive pricing and availability