SI1026X-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1026X-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance dual N-channel MOSFET with low on-resistance and small package size, suitable for cost-effective power management and control applications.

Product Features and Performance

Dual N-channel MOSFET configuration

Low on-resistance (1.4Ω max. at 500mA, 10V)

Small SC-89 (SOT-563F) surface mount package

High continuous drain current (305mA at 25°C)

Low input capacitance (30pF max. at 25V)

Logic-level gate drive (2.5V max. threshold voltage)

Low gate charge (0.6nC max. at 4.5V)

Wide operating temperature range (-55°C to 150°C)

Product Advantages

Compact size for space-constrained designs

Efficient power management through low on-resistance

Suitable for cost-sensitive applications

Reliable operation across wide temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Continuous Drain Current (Id): 305mA at 25°C

On-Resistance (Rds(on)): 1.4Ω max. at 500mA, 10V

Input Capacitance (Ciss): 30pF max. at 25V

Gate Threshold Voltage (Vgs(th)): 2.5V max. at 250μA

Gate Charge (Qg): 0.6nC max. at 4.5V

Quality and Safety Features

RoHS3 compliant

SC-89 (SOT-563F) package for surface mount applications

Compatibility

Compatible with a wide range of power management and control applications

Application Areas

Power management circuits

Switching circuits

Control applications

Product Lifecycle

Active product

Replacements and upgrades may be available

Key Reasons to Choose This Product

Compact size for space-constrained designs

Low on-resistance for efficient power management

Suitable for cost-sensitive applications

Reliable operation across wide temperature range

RoHS3 compliance for environmental responsibility