SI1025X-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1025X-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

ROHS3 Compliant

SC-89 (SOT-563F) Packaging

Base Product Number: SI1025

SOT-563, SOT-666 Package / Case

SC-89 (SOT-563F) Supplier Device Package

TrenchFET Series

Tape & Reel (TR) Package

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 250mW

2 P-Channel (Dual) Configuration

Drain to Source Voltage (Vdss): 60V

Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 190mA

Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V

Logic Level Gate FET Feature

Vgs(th) (Max) @ Id: 3V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V

Surface Mount Mounting Type

Product Advantages

Compact and efficient design

High temperature operation capability

Low on-resistance for improved power efficiency

Logic-level gate drive for easy interface with control circuits

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V

Current Continuous Drain (Id) @ 25°C: 190mA

Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V

Vgs(th) (Max) @ Id: 3V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V

Quality and Safety Features

ROHS3 Compliant

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Suitable for use in various electronic devices and systems that require efficient power switching and control

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

Compact and efficient design

High temperature operation capability

Low on-resistance for improved power efficiency

Logic-level gate drive for easy interface with control circuits

Proven reliability and quality from a reputable manufacturer