SI1023X-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1023X-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual P-channel MOSFET transistor

Product Features and Performance

Trenched MOSFET technology

Low on-resistance

Logic level gate

Wide operating temperature range (-55°C to 150°C)

Low gate charge

Product Advantages

Efficient power switching

Compact surface mount package

Suitable for high-density designs

Reliable and durable performance

Key Technical Parameters

Drain-to-source voltage (Vdss): 20V

On-resistance (Rds(on)): 1.2Ω @ 350mA, 4.5V

Continuous drain current (Id): 370mA @ 25°C

Gate threshold voltage (Vgs(th)): 450mV @ 250µA (min)

Gate charge (Qg): 1.5nC @ 4.5V (max)

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power management circuits

Switching applications

Battery-powered devices

Telecommunication equipment

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

Efficient power switching performance

Compact and space-saving package

Wide operating temperature range

Reliable and durable construction

Suitable for high-density designs