SI1021R-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1021R-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

P-Channel TrenchFET MOSFET transistor

Product Features and Performance

Drain to Source Voltage (Vdss) of 60V

Low on-resistance (Rds(on)) of 4Ω at 500mA, 10V

Wide operating temperature range of -55°C to 150°C

Low input capacitance (Ciss) of 23pF at 25V

Continuous Drain Current (Id) of 190mA at 25°C

Power Dissipation (Pd) of 250mW at 25°C

Product Advantages

Excellent power efficiency due to low on-resistance

Wide temperature range suitable for harsh environments

Small package size for space-constrained applications

Low input capacitance for fast switching performance

Key Technical Parameters

P-Channel MOSFET technology

Vgs(th) (Max) of 3V at 250μA

Gate Charge (Qg) of 1.7nC at 15V

Drive Voltage range of 4.5V to 10V

Quality and Safety Features

RoHS3 compliant

SC-75A package

Compatibility

Suitable for surface mount applications

Application Areas

Power management circuits

Switching applications

Battery-powered devices

Industrial controls

Product Lifecycle

Currently available

No information on discontinuation or replacements

Several Key Reasons to Choose This Product

Excellent power efficiency with low on-resistance

Wide operating temperature range for harsh environments

Small package size for space-constrained applications

Fast switching performance due to low input capacitance

Suitable for a variety of power management and switching applications