SI1016CX-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1016CX-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI1016CX-T1-GE3 is a discrete N- and P-channel MOSFETs in a space-saving SC-89 (SOT-563F) package.

Product Features and Performance

Nand P-channel MOSFET array

20V drain-source voltage

Low RDS(on) of 396mΩ @ 500mA, 4.5V

Logic-level gate

Low input capacitance of 43pF @ 10V

Low gate charge of 2nC @ 4.5V

Operating temperature range of -55°C to 150°C

Power rating of 220mW

Product Advantages

Compact SC-89 (SOT-563F) package

Efficient power handling

Excellent thermal management

Suitable for space-constrained applications

Key Technical Parameters

Drain-Source Voltage (VDS): 20V

On-Resistance (RDS(on)): 396mΩ @ 500mA, 4.5V

Input Capacitance (Ciss): 43pF @ 10V

Gate Charge (Qg): 2nC @ 4.5V

Operating Temperature Range: -55°C to 150°C

Power Rating: 220mW

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

The SI1016CX-T1-GE3 is compatible with a wide range of electronic circuits and systems that require compact, efficient, and cost-effective N- and P-channel MOSFET solutions.

Application Areas

Power management circuits

Switching applications

Motor control

Battery management systems

General-purpose electronics

Product Lifecycle

The SI1016CX-T1-GE3 is an active product and not nearing discontinuation. Replacement or upgrade options are available from Vishay / Siliconix.

Several Key Reasons to Choose This Product

Compact SC-89 (SOT-563F) package, suitable for space-constrained applications.

Efficient power handling with low RDS(on) of 396mΩ and low gate charge of 2nC.

Wide operating temperature range of -55°C to 150°C, ensuring reliable performance in diverse environments.

Excellent thermal management, enabling efficient heat dissipation.

RoHS3 compliance, ensuring compliance with environmental regulations.