Manufacturer Part Number
SI1013X-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
Trench Technology
Low On-Resistance
Fast Switching Speed
High Reliability
Wide Temperature Range (-55°C to 150°C)
Product Advantages
Efficient Power Conversion
Improved Energy Efficiency
Compact and Reliable Design
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs Max): ±6V
On-Resistance (Rds(on) Max): 1.2Ω @ 350mA, 4.5V
Drain Current (Id Continuous): 350mA @ 25°C
Power Dissipation (Max): 250mW
Quality and Safety Features
RoHS3 Compliant
Reliable and Durable Construction
Compatibility
Surface Mount (SC-89-3 Package)
Compatible with Various Electronic Circuits and Applications
Application Areas
Power Management
Switching Circuits
Battery-Powered Devices
Industrial Electronics
Consumer Electronics
Product Lifecycle
Currently Available
No Discontinuation Planned
Replacement or Upgrade Options May be Available
Key Reasons to Choose This Product
Efficient Power Handling
Low On-Resistance for Improved Energy Efficiency
Fast Switching Capabilities
Wide Temperature Range for Reliable Operation
Compact Surface Mount Package for Space-Constrained Designs
RoHS Compliance for Environmental Responsibility