Manufacturer Part Number
SI1013R-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
A P-channel MOSFET transistor with high performance and small package size.
Product Features and Performance
Drain to Source Voltage (Vdss) of 20V
Low On-Resistance (Rds(on)) of 1.2 ohm at 350mA, 4.5V
Continuous Drain Current (Id) of 350mA at 25°C
Power Dissipation (Max) of 150mW at 25°C
Fast switching speed with Gate Charge (Qg) of 1.5nC at 4.5V
Product Advantages
Compact SC-75 surface mount package
Suitable for high-frequency, high-efficiency switching applications
Low power loss and high efficiency
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Voltage: Vdss = 20V, Vgs(max) = ±6V
Current: Id(continuous) = 350mA
Resistance: Rds(on) = 1.2 ohm
Power: Power Dissipation (Max) = 150mW
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Suitable for a wide range of electronic applications
Application Areas
DC-DC converters
Power supplies
Motor drivers
Lighting control
Battery management systems
Product Lifecycle
Current production, no known plans for discontinuation
Replacements and upgrades available from Vishay
Key Reasons to Choose
Excellent performance-to-size ratio
Low power consumption and high efficiency
Wide operating temperature range
Reliable and RoHS compliant