SI1012X-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1012X-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel TrenchFET MOSFET

Product Features and Performance

20V Drain-Source Voltage

700mΩ On-Resistance at 600mA, 4.5V Gate-Source Voltage

500mA Continuous Drain Current at 25°C

250mW Power Dissipation at 25°C

-55°C to 150°C Operating Temperature Range

Low Gate Charge of 0.75nC at 4.5V

Product Advantages

Trench technology for low on-resistance and high power density

Suitable for power management, switching, and amplifier applications

Key Technical Parameters

Drain-Source Voltage: 20V

Gate-Source Voltage: ±6V

On-Resistance: 700mΩ max at 600mA, 4.5V

Drain Current: 500mA continuous at 25°C

Power Dissipation: 250mW at 25°C

Gate Charge: 0.75nC max at 4.5V

Quality and Safety Features

RoHS3 compliant

SC-89-3 package for surface mount

Compatibility

Can be used in a variety of power management, switching, and amplifier applications

Application Areas

Power management

Switching

Amplifiers

Product Lifecycle

Currently available, no plans for discontinuation

Key Reasons to Choose This Product

Trench technology for low on-resistance and high power density

Wide operating temperature range of -55°C to 150°C

Low gate charge for efficient switching

Suitable for a variety of power management, switching, and amplifier applications

RoHS3 compliant and available in a surface mount package