SI1012X-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI1012X-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-channel enhancement-mode power MOSFET

Optimized for use in power management, control, and switching applications

Product Features and Performance

Operates at high switching speeds

Low on-state resistance

Low gate charge

Low power dissipation

Wide operating temperature range (-55°C to 150°C)

Product Advantages

Efficient power management

Reliable performance

Compact design

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs Max): ±6V

On-State Resistance (Rds(on) Max): 700mΩ @ 600mA, 4.5V

Continuous Drain Current (Id): 500mA

Power Dissipation (Max): 250mW

Threshold Voltage (Vgs(th) Max): 900mV @ 250μA

Quality and Safety Features

RoHS3 compliant

Reliable construction and design

Meets safety standards

Compatibility

Compatible with various power management and control applications

Application Areas

Power supplies

Motor drives

Battery management

Instrumentation

General power switching

Product Lifecycle

Currently available

No plans for discontinuation

Upgrades and replacements may be available in the future

Key Reasons to Choose This Product

Efficient power management and control

Reliable and robust performance

Compact and space-saving design

Wide operating temperature range

Compliant with RoHS3 standards

Suitable for a variety of power management and control applications