Manufacturer Part Number
SI1029X-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI1029X-T1-GE3 is a discrete semiconductor product in the Transistors - FETs, MOSFETs - Arrays category.
Product Features and Performance
N and P-Channel MOSFET
60V Drain to Source Voltage (Vdss)
4Ohm Max Rds On @ 500mA, 10V
305mA Continuous Drain Current (Id) @ 25°C
30pF Max Input Capacitance (Ciss) @ 25V
5V Max Gate-Source Threshold Voltage (Vgs(th)) @ 250A
75nC Max Gate Charge (Qg) @ 4.5V
Product Advantages
Trench MOSFET technology
Logic level gate drive
Wide operating temperature range (-55°C to 150°C)
Surface mount packaging
Key Technical Parameters
MOSFET technology
60V Drain to Source Voltage
250mW Max Power
-55°C to 150°C Operating Temperature Range
Quality and Safety Features
RoHS3 compliant
Compatibility
SOT-563, SOT-666 package compatibility
Application Areas
General purpose switching and amplification applications
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose
Reliable Trench MOSFET technology
Wide operating temperature range
Surface mount packaging for easy integration
Logic level gate drive for easy interfacing
RoHS3 compliance for environmental compatibility