SI1026X-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI1026X-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

Dual Configuration

Low On-Resistance

High Power Capability

Wide Operating Temperature Range

Product Advantages

ROHS3 Compliant

Logic Level Gate

Surface Mount Packaging

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

On-Resistance (Rds On): 1.4Ω @ 500mA, 10V

Continuous Drain Current (Id): 305mA @ 25°C

Input Capacitance (Ciss): 30pF @ 25V

Gate Threshold Voltage (Vgs(th)): 2.5V @ 250μA

Gate Charge (Qg): 0.6nC @ 4.5V

Quality and Safety Features

Compliant with RoHS Directive

Compatibility

Suitable for Surface Mount Applications

Application Areas

General-Purpose Switching and Amplification

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

Dual N-Channel MOSFET Configuration

Low On-Resistance for Efficient Power Handling

Wide Operating Temperature Range

Logic Level Gate for Easy Interfacing

Surface Mount Packaging for Compact Design