SI1032X-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1032X-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-Channel TrenchFET MOSFET

Product Features and Performance

N-Channel MOSFET with TrenchFET technology

Low on-resistance (Rds(on)) for high efficiency

Fast switching speed

Low gate charge (Qg) for efficient driver operation

Suitable for DC/DC converters, motor drives, and other power management applications

Product Advantages

Excellent thermal management

Reliable and robust design

Optimized for high-frequency switching

Efficient power conversion

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±6V

On-Resistance (Rds(on)): 5Ω @ 200mA, 4.5V

Continuous Drain Current (Id): 200mA

Power Dissipation (Pd): 300mW

Gate Threshold Voltage (Vgs(th)): 1.2V @ 250μA

Gate Charge (Qg): 0.75nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Suitable for industrial and automotive applications

Reliable and durable design

Compatibility

Compatible with various power management and motor control circuits

Application Areas

DC/DC converters

Motor drives

Power management systems

Automotive electronics

Industrial controls

Product Lifecycle

Currently in production

No immediate plans for discontinuation

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Excellent electrical performance with low on-resistance and fast switching

Efficient power conversion for improved system efficiency

Reliable and robust design for industrial and automotive applications

Optimized for high-frequency switching in power management systems

RoHS3 compliance for environmental sustainability