Manufacturer Part Number
IRFBF30PBF
Manufacturer
Vishay / Siliconix
Introduction
A high-voltage, N-channel power MOSFET in a TO-220 package.
Product Features and Performance
High breakdown voltage of 900V
Low on-resistance of 3.7Ω at 2.2A, 10V
Continuous drain current of 3.6A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent high-voltage handling capability
Efficient power conversion with low conduction losses
Reliable operation over a wide temperature range
Suitable for a variety of power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.7Ω at 2.2A, 10V
Continuous Drain Current (Id): 3.6A at 25°C
Input Capacitance (Ciss): 1200pF at 25V
Power Dissipation (Tc): 125W
Quality and Safety Features
RoHS3 compliant
Suitable for a wide range of industrial and consumer applications
Compatibility
Through-hole mounting in a TO-220 package
Application Areas
Switching power supplies
Motor drives
Telecommunications equipment
Industrial control systems
Product Lifecycle
This product is an active and widely used component in the industry.
Replacement or upgrade options may be available from Vishay or other manufacturers.
Key Reasons to Choose This Product
Excellent high-voltage handling capability for reliable power conversion
Low on-resistance for efficient power transfer and reduced conduction losses
Wide operating temperature range for use in diverse environmental conditions
Proven reliability and suitability for a variety of power conversion applications