Manufacturer Part Number
IRFBG30PBF
Manufacturer
Vishay / Siliconix
Introduction
High-voltage, high-speed power MOSFET
Product Features and Performance
N-channel enhancement-mode vertical power MOSFET
Capable of handling high voltages up to 1000V
Low on-resistance for efficient power conversion
Fast switching speed for high-frequency applications
High power density and thermal efficiency
Product Advantages
Robust and reliable design
Optimized for high-voltage, high-power applications
Excellent thermal management characteristics
Ease of use with simple gate drive requirements
Key Technical Parameters
Drain-to-source voltage (Vdss): 1000V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 5Ω @ 1.9A, 10V
Continuous drain current (Id): 3.1A @ 25°C
Input capacitance (Ciss): 980pF @ 25V
Power dissipation (Ptot): 125W @ Tc
Quality and Safety Features
RoHS3 compliant
Produced in ISO-certified manufacturing facilities
Rigorous testing and quality control measures
Compatibility
Through-hole mounting (TO-220AB package)
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial and medical equipment
Automotive electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Upgrades and replacements may be available in the future
Key Reasons to Choose This Product
Excellent performance in high-voltage, high-power applications
Efficient power conversion with low on-resistance
Fast switching speed for high-frequency operation
Robust and reliable design for long-term use
Ease of use with simple gate drive requirements
Compatibility with a wide range of power electronics applications