Manufacturer Part Number
IRFD014PBF
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
RoHS3 Compliant
Operating Temperature Range: -55°C to 175°C
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
Maximum On-Resistance (Rds(on)): 200mΩ @ 1A, 10V
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) Technology
Maximum Continuous Drain Current (Id): 1.7A @ 25°C
Maximum Input Capacitance (Ciss): 310pF @ 25V
Maximum Power Dissipation: 1.3W @ 25°C
N-Channel FET Type
Maximum Gate Threshold Voltage (Vgs(th)): 4V @ 250μA
Recommended Drive Voltage: 10V
Product Advantages
Reliable and efficient MOSFET performance
Wide operating temperature range
Compact through-hole package
Key Technical Parameters
Voltage Ratings: Vdss, Vgs
Current Ratings: Id, Rds(on)
Capacitance: Ciss
Power Handling: Power Dissipation
Gate Characteristics: Vgs(th), Qg
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Through-hole mounting
Application Areas
Suitable for various power electronics, control, and switching applications
Product Lifecycle
Active product
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Reliable and efficient MOSFET performance
Wide operating temperature range
Compact through-hole package
RoHS3 compliance for environmental responsibility
Suitable for high-reliability applications