Manufacturer Part Number
IRFD110PBF
Manufacturer
Vishay / Siliconix
Introduction
N-Channel Power MOSFET
Product Features and Performance
High voltage rating up to 100V
Low on-resistance of 540mOhm
Continuous drain current of 1A
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 180pF
Power dissipation of 1.3W
Product Advantages
Robust and reliable performance
Efficient power handling
Suitable for high-voltage applications
Compact through-hole package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 4V @ 250μA
On-Resistance (Rds(on)): 540mOhm @ 600mA, 10V
Input Capacitance (Ciss): 180pF @ 25V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Reliable performance and long lifespan
Compatibility
Suitable for a wide range of high-voltage, high-current applications
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Robust and reliable performance
Efficient power handling capabilities
Wide operating temperature range
Low on-resistance and input capacitance
Compact through-hole package for easy integration
IRFD110PBF MOSElectro-Films (EFI) / Vishay