Manufacturer Part Number
IRFD120PBF
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
Manufacturer's packaging: 4-HVMDIP
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-HVMDIP
Package: Bulk
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Technology: MOSFET (Metal Oxide)
Current Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Power Dissipation (Max): 1.3W (Ta)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Product Advantages
RoHS3 Compliant
Wide Operating Temperature Range
High Voltage Capability
Low On-Resistance
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Current Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Power Dissipation (Max): 1.3W (Ta)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Through Hole Mounting
Application Areas
General Purpose Power Switching
Power Amplifiers
Motor Drives
Switching Power Supplies
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
RoHS3 Compliant
Wide Operating Temperature Range
High Voltage Capability
Low On-Resistance
Suitable for Power Switching, Amplifiers, Motor Drives, and Switching Power Supplies