Manufacturer Part Number
IRFD123PBF
Manufacturer
Vishay / Siliconix
Introduction
This is a single N-Channel MOSFET transistor from Vishay / Siliconix. It is part of the IRFD123 series.
Product Features and Performance
High drain-source voltage rating of 100V
Low on-resistance of 270mOhm max. at 780mA, 10V
Operating temperature range of -55°C to 175°C
Continuous drain current of 1.3A at 25°C
Input capacitance of 360pF max. at 25V
Power dissipation of 1.3W at 25°C
Gate charge of 16nC max. at 10V
Product Advantages
Suitable for high voltage, high current switching applications
Excellent power efficiency due to low on-resistance
Wide operating temperature range
Robust and reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 270mOhm max. at 780mA, 10V
Continuous Drain Current (Id): 1.3A at 25°C
Input Capacitance (Ciss): 360pF max. at 25V
Power Dissipation (Pd): 1.3W at 25°C
Gate Charge (Qg): 16nC max. at 10V
Quality and Safety Features
RoHS3 compliant
Reliable through-hole package (4-HVMDIP)
Compatibility
This MOSFET is suitable for use in a wide range of high voltage, high current switching applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Amplifiers
Telecommunications equipment
Product Lifecycle
The IRFD123PBF is an active and widely available product. Replacement or upgrade options are available from Vishay/Siliconix and other manufacturers.
Key Reasons to Choose This Product
High voltage and current capability
Excellent power efficiency due to low on-resistance
Wide operating temperature range
Reliable through-hole package
RoHS3 compliance
Widely available and actively supported by the manufacturer
IRFD110PBF MOSElectro-Films (EFI) / Vishay