IRFD210PBF - Vishay Siliconix

Manufacturer Part Number

IRFD210PBF

Manufacturer

Vishay / Siliconix

Introduction

The IRFD210PBF is a N-channel MOSFET transistor.

Product Features and Performance

Through-hole package

Operating temperature range of -55°C to 150°C

Drain to Source Voltage (Vdss) of 200V

Maximum Gate to Source Voltage (Vgs) of ±20V

On-resistance (Rds(on)) of 1.5Ω at 360mA, 10V

Continuous Drain Current (Id) of 600mA at 25°C

Input Capacitance (Ciss) of 140pF at 25V

Power Dissipation (Pd) of 1W at 25°C

Product Advantages

High breakdown voltage

Low on-resistance

Compact through-hole package

Key Technical Parameters

MOSFET technology

N-channel FET type

Threshold Voltage (Vgs(th)) of 4V at 250μA

Gate Charge (Qg) of 8.2nC at 10V

Drive Voltage range of 10V

Quality and Safety Features

RoHS3 compliant

Industrial-grade quality and reliability

Compatibility

The IRFD210PBF is compatible with various electronic circuits and systems that require a high-voltage, low-resistance N-channel MOSFET.

Application Areas

Power supplies

Motor drives

Switching circuits

Amplifiers

Industrial controls

Product Lifecycle

The IRFD210PBF is an active product and is currently available from Vishay / Siliconix. No information on discontinuation or replacement is provided.

Key Reasons to Choose This Product

High breakdown voltage for versatile applications

Low on-resistance for efficient power switching

Compact through-hole package for easy integration

Industrial-grade quality and reliability

RoHS3 compliance for environmental friendliness