Manufacturer Part Number
IRFD210PBF
Manufacturer
Vishay / Siliconix
Introduction
The IRFD210PBF is a N-channel MOSFET transistor.
Product Features and Performance
Through-hole package
Operating temperature range of -55°C to 150°C
Drain to Source Voltage (Vdss) of 200V
Maximum Gate to Source Voltage (Vgs) of ±20V
On-resistance (Rds(on)) of 1.5Ω at 360mA, 10V
Continuous Drain Current (Id) of 600mA at 25°C
Input Capacitance (Ciss) of 140pF at 25V
Power Dissipation (Pd) of 1W at 25°C
Product Advantages
High breakdown voltage
Low on-resistance
Compact through-hole package
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold Voltage (Vgs(th)) of 4V at 250μA
Gate Charge (Qg) of 8.2nC at 10V
Drive Voltage range of 10V
Quality and Safety Features
RoHS3 compliant
Industrial-grade quality and reliability
Compatibility
The IRFD210PBF is compatible with various electronic circuits and systems that require a high-voltage, low-resistance N-channel MOSFET.
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifiers
Industrial controls
Product Lifecycle
The IRFD210PBF is an active product and is currently available from Vishay / Siliconix. No information on discontinuation or replacement is provided.
Key Reasons to Choose This Product
High breakdown voltage for versatile applications
Low on-resistance for efficient power switching
Compact through-hole package for easy integration
Industrial-grade quality and reliability
RoHS3 compliance for environmental friendliness
IRFD210PBF MOSElectro-Films (EFI) / Vishay