Manufacturer Part Number
IRFBG20PBF
Manufacturer
Vishay / Siliconix
Introduction
High-power N-channel power MOSFET
Designed for use in high-voltage, high-current switching applications
Product Features and Performance
Voltage rating up to 1000V
Low on-resistance of 11Ω
Continuous drain current up to 1.4A at 25°C
Input capacitance of 500pF
Power dissipation up to 54W
Product Advantages
Excellent switching performance
High voltage handling capability
Low conduction losses
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 11Ω @ 840mA, 10V
Continuous Drain Current (Id): 1.4A @ 25°C
Input Capacitance (Ciss): 500pF @ 25V
Power Dissipation (Pd): 54W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220AB package for through-hole mounting
Compatibility
Suitable for use in a wide range of high-voltage, high-current switching applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Amplifiers
Product Lifecycle
This product is an active and widely used MOSFET from Vishay/Siliconix
Replacements and upgrades are readily available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Excellent switching performance for fast, reliable operation
Robust and reliable design for long-term use
RoHS compliance for use in modern electronic systems