Manufacturer Part Number
IRFBF20SPBF
Manufacturer
Vishay / Siliconix
Introduction
High-voltage N-channel enhancement-mode power MOSFET
Product Features and Performance
900V drain-to-source voltage
Very low on-resistance (8Ω @ 1A, 10V)
Fast switching speed
Low gate charge (38nC @ 10V)
Low input capacitance (490pF @ 25V)
Suitable for high-frequency switching applications
Product Advantages
Excellent energy efficiency
Reliable high-voltage operation
Fast and efficient switching
Compact and thermally efficient package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Maximum Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 1.7A @ 25°C (Tc)
On-Resistance (Rds(on)): 8Ω @ 1A, 10V
Input Capacitance (Ciss): 490pF @ 25V
Power Dissipation: 3.1W (Ta), 54W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust DPAK (TO-263) package
Withstands high temperatures up to 150°C
Compatibility
Suitable for high-voltage, high-frequency switching applications
Compatible with various electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Converters
Switching regulators
Product Lifecycle
Currently in production
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
Excellent high-voltage performance
Highly efficient and fast switching
Compact and thermally efficient package
Reliable and robust design
Suitable for a wide range of high-power applications
IRFBE30PBF MOSElectro-Films (EFI) / Vishay