Manufacturer Part Number
IRFBF20LPBF
Manufacturer
Vishay / Siliconix
Introduction
High-voltage n-channel power MOSFET in a TO-262-3 long leads package
Product Features and Performance
Low on-resistance
High voltage rating up to 900V
Suitable for high-frequency, high-voltage switching applications
Fast switching and low gate charge
Product Advantages
Excellent power handling capability
Reliable and robust performance
Suitable for a wide range of high-voltage applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 900V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Continuous Drain Current (Id) @ 25°C: 1.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Meets IPC/JEDEC J-STD-020 moisture sensitivity level
Reliable and durable design
Compatibility
Compatible with a wide range of high-voltage, high-frequency switching applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Industrial and consumer electronics
Telecommunications equipment
Automotive electronics
Product Lifecycle
Current product, no discontinuation plans
Replacement or upgraded products available if needed
Key Reasons to Choose This Product
Excellent power handling and high-voltage capability
Fast switching and low gate charge for efficient high-frequency operation
Reliable and robust design for long-term performance
Suitable for a wide range of high-voltage, high-frequency applications
RoHS compliance and industry-standard packaging for ease of use
IRFBE20SPBFElectro-Films (EFI) / Vishay