Manufacturer Part Number
IRFBF20PBF
Manufacturer
Vishay / Siliconix
Introduction
High-voltage, high-power N-channel MOSFET
Product Features and Performance
Optimized for high-voltage, high-power switching applications
Extremely low on-resistance for high efficiency
Fast switching speed
Excellent avalanche capability
Rugged and reliable design
Product Advantages
Improved energy efficiency
Reduced power dissipation
Enhanced reliability and durability
Key Technical Parameters
Drain to Source Voltage (Vdss): 900 V
Maximum Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 8 Ω @ 1 A, 10 V
Continuous Drain Current (Id): 1.7 A @ 25°C
Input Capacitance (Ciss): 490 pF @ 25 V
Power Dissipation (Tc): 54 W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments (-55°C to 150°C)
Compatibility
TO-220AB package
Compatible with various high-voltage, high-power applications
Application Areas
High-voltage, high-power switching applications
Industrial power supplies
Motor drives
Inverters
Welding equipment
Medical equipment
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options are available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Wide operating temperature range
Compatibility with various high-voltage, high-power applications
Availability of replacement and upgrade options