Manufacturer Part Number
IRFBE30PBF
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor device, specifically a transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 800 V
Gate-Source Voltage (Vgs) maximum of ±20 V
On-State Resistance (Rds(on)) of 3 Ohm at 2.5 A, 10 V
Continuous Drain Current (Id) of 4.1 A at 25°C (Tc)
Input Capacitance (Ciss) of 1300 pF at 25 V
Power Dissipation (Tc) of 125 W
Gate Charge (Qg) of 78 nC at 10 V
Product Advantages
High voltage rating
Low on-state resistance
High current capability
Suitable for various power applications
Key Technical Parameters
MOSFET Technology
Through-Hole Mounting
TO-220-3 Package
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for various power electronic applications
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial electronics
Product Lifecycle
This product is an active and available part from the manufacturer.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Suitable for a variety of power electronics applications
Proven reliability and quality from a reputable manufacturer
IRFBE30PBF MOSElectro-Films (EFI) / Vishay