Manufacturer Part Number
IRFBE20PBF
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
Current Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Product Advantages
High Voltage Rating
Low On-Resistance
High Current Handling Capability
Suitable for High Power Applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and power systems
Application Areas
Suitable for high power, high voltage applications such as power supplies, motor drives, and inverters
Product Lifecycle
This product is currently available and is not nearing discontinuation.
Replacement or upgrade options may be available from Vishay / Siliconix.
Key Reasons to Choose This Product
High voltage rating up to 800V
Low on-resistance for efficient power conversion
High current handling capability up to 1.8A
Suitable for high power, high voltage applications
RoHS3 compliant for environmental safety
Available from a reputable manufacturer, Vishay / Siliconix
