STPSC4H065D - STMicroelectronics

Manufacturer Part Number

STPSC4H065D

Manufacturer

STMicroelectronics

Introduction

High-performance SiC (Silicon Carbide) Schottky diode in TO-220 package

Product Features and Performance

Low forward voltage drop

Fast switching speed

High reverse voltage capability

High thermal stability

Low switching losses

Low leakage current

Product Advantages

Increased energy efficiency

Reduced heat generation

Compact and robust design

Suitable for high-frequency and high-power applications

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 650 V

Current Average Rectified (Io): 4 A

Voltage Forward (Vf) (Max) @ If: 1.75 V @ 4 A

Reverse Recovery Time (trr): 0 ns

Capacitance @ Vr, F: 200 pF @ 0 V, 1 MHz

Operating Temperature Junction: -40°C ~ 175°C

Quality and Safety Features

ROHS3 Compliant

TO-220AC package for reliable performance and thermal management

Compatibility

Suitable for high-frequency and high-power applications

Application Areas

Power conversion

Motor drives

Switched-mode power supplies

Solar inverters

Electric vehicle charging systems

Product Lifecycle

Actively available

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Excellent energy efficiency and low power losses

Fast switching capabilities for high-frequency applications

High reverse voltage and current handling capabilities

Robust and reliable performance in harsh environments

Compact and easy-to-integrate design